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Annotation
В данной работе изложена сущность создания затворов микронных размеров для СВЧ монолитных интегральных схем и HEMT транзисторов на основе нитрида галлия с использованием электронно-лучевой литографии. Определены возможности изготовления минимальных затворов на установке электронно-лучевой литографии.
This graduation work describes the essence of creating micron-sized gates for microwave monolithic integrated circuits and gallium nitride-based HEMT transistors using electron beam lithography. The possibilities of manufacturing minimal gates on the installation of electron-beam lithography are determined.
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