| Таблица | Карточка | RUSMARC | |
|
|
Разрешенные действия: Прочитать Загрузить (98 Кб) Группа: Анонимные пользователи Сеть: Интернет |
Аннотация
The results of complex investigations of electrical and photoelectrical properties of isotypic p-Si/p-GaN<O> and anisotypic n-Si/p-GaN<O> heterojunctions are presented. The integral and spectralphotoresponses, photoresponse kinetics when different direct and reverse biases are applied, as well as I-Vcharacteristics and the saturanion photoemf were studied. It is shown that in both types of heterojunctionscharge distributions at the interface are mainly determined by the charge binding on the boundary statesdensity of which are estimated as 1014-1015 cm-2. Mechanisms of the photosensitivity formation in anisotypicand isotypic heterojunctions are analyzed. Differential type of photokinetics is shown to be related to statesrecharging on the interface. The energetic bands models of heterojunction proposed allows us to explainadequately the observed effects. The efficiency of solar cells on the base of heterojunctions Si/GaN<O> arediscussed.
Права на использование объекта хранения
| Место доступа | Группа пользователей | Действие | ||||
|---|---|---|---|---|---|---|
| Локальная сеть ИБК СПбПУ | Все |
|
||||
| Интернет | Авторизованные пользователи |
|
||||
|
Интернет | Анонимные пользователи |
|
Входит в состав
Статистика использования
|
|
Количество обращений: 575
За последние 30 дней: 5 Подробная статистика |