Kozlovski, V. Radiation defect engineering / V. Kozlovski, V. Abrosimova. — Hackensack, N. J. : World Scientific, 2005. — 253 p : ill. — (Selected topics in electronics and systems ; vol. 37). — Reprinted from: International journal of high speed electronics and systems, vol. 15, №1, 2005.

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The increasing complexity of problems in semiconductor electronics and optoelectronics has exposed the insufficient potential of the technological doping processes currently used. One of the most promising techniques, which this book explores, is radiation doping: the intentional, directional modification of the properties of semiconductors under the action of various types of radiation. The authors consider the basic principles of proton interactions with single crystal semiconductors on the basis of both theory as well as practical results. All types of proton modifications of the materials known presently are analyzed in detail and exciting new fields of research in this direction are discussed.