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Было проведено исследование поверхности эмиссионно-активных тонких углеродных плёнок, выращенных на подложках монокристаллического кремния методами туннельной микроскопии и туннельной спектроскопии. Показана различная реакция областей на внешнее облучение.
Emission-active thin carbon films grown at monocrystalline silicon substrates were studied by the methods of scanning tunneling microscopy and tunneling spectroscopy. Spatial non-uniformity of photoirradiation effect onto electric properties has been detected.
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