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Annotation
В пленках хитозана и нанокомпозитов на их основе с различным содержанием нанотрубок галлуазита обнаружены три области диэлектрической релаксации. Рассчитаны параметры релаксационных процессов и сделаны выводы об их молекулярных механизмах. Изучено влияние введения галлуазита на характеристики релаксационных процессов.
Three dielectric relaxation regions are observed in the chitosan films and nanocomposites of chitosan with different halloysite nanotubes content. The relaxation processes parameters are computed and the conclusions about their molecular mechanism are made. The halloysite introduction influence on the relaxation processes characteristics is investigated.
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