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В данной работе рассмотрены возможности роста эпитаксиальных слоев и кристаллов оксида галлия сублимационным методом. Изучены особенности процесса сублимации для роста схожих по физическим свойствам с окси-дом галлия материалов. Были проведены эксперименты по росту эпитаксиальных слоев и кристаллов оксида галлия методом сублимации. После были изучены структура и состав полученных образцов. В результате были получены эпитаксиальные слои и кристаллы на подложках из сапфира и карбида кремния.
In this work, the possibilities of growing epitaxyl layers and crystals of gallium oxide using physical vapor transport are considered. The features of the sublimation process for the growth of materials similar in physical properties to gallium oxide have been studied. Experiments were carried out on the growth of epitaxial layers and gallium oxide crystals by the sublimation method. After that, the structure and composition of the obtained samples were studied. As a result, epitaxial layers and crystals on sapphire and silicon carbide substrates were ob-tained.
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