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В данной работе рассмотрено получение тонких слоев диоксида кремния методом химического осаждения из газовой фазы. Проведена серия экспериментов по получению пленок диоксида кремния при различных параметрах осаждения. Исследованы свойства осажденных слоев, а также влияние температуры и давления на скорость роста и характеристики полученных пленок.
In this work, the preparation of thin layers of silicon dioxide by chemical vapor deposition is considered. A series of experiments was carried out to obtain silicon dioxide films at various deposition parameters. The properties of the deposited layers, as well as the effect of temperature and pressure on the growth rate and characteristics of the obtained films, are investigated.
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