Details
Title | Power microelectronics. Device and process technologies. — 2nd ed. |
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Creators | Liang Yung C.; Samudra Ganesh S.; Huang Chih-Fang |
Imprint | Singapore [etc.]: World Scientific, cop. 2017 |
Collection | Электронные книги зарубежных издательств; Общая коллекция |
Subjects | Полупроводниковые приборы силовые; Микроэлектроника; World Scientific Publishing eBooks Collection |
UDC | 621.314.632; 621.38.049.77 |
Document type | Other |
File type | Other |
Language | English |
Rights | Свободный доступ из сети Интернет (чтение, печать) |
Additionally | New arrival |
Record key | RU\SPSTU\edoc\73329 |
Record create date | 8/19/2024 |
This descriptive textbook provides a clear look at the theories and process technologies necessary for understanding the modern power semiconductor devices, i.e. from the fundamentals of p-n junction electrostatics, unipolar MOSFET and superjunction structures, bipolar IGBT, to the most recent wide bandgap SiC and GaN devices. It also covers their associated semiconductor process technologies. Real examples based on actual fabricated devices, with the process steps described in clear detail are especially useful. This book is suitable for university courses on power semiconductor or power electronic devices. Device designers and researchers will also find this book a good reference in their work, especially for those focusing on the advanced device development and design aspects.
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