Афанасьев, А. В. Ионное легирование карбида кремния в технологии приборов силовой электроники = Ion doping of silicon carbide in the technology of power electronics devices. Review: обзор / А. В. Афанасьев, В. А. Ильин, В. В. Лучинин. — 1 файл (1,75 Мб). — (Технологические процессы и маршруты). — DOI 10.24151/1561-5405-2022-27-4-439-462. — Текст: электронный // Известия высших учебных заведений. Электроника = Proceedings of universities. Electronics: научно-технический журнал. – 2022. – С. 439-462. — Загл. с титул. экрана. — Список литературы представлен на русском и английском языках. — Доступ по паролю из сети Интернет (чтение). — <URL:https://elibrary.ru/item.asp?id=49396190>.
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