Details
| Title | Выращивание гетероструктур InGaN/GaN методом молекулярно-лучевой эпитаксии на сапфире // Материалы...24 - 29 ноября 2003г. – 2005. – Радиофизический факультет. — Ч.6 |
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| Creators | Петров С.И. ; Сидоров В.Г. |
| Other creators | Глухов Владимир Викторович |
| Organization | Санкт-Петербургский государственный политехнический университет. Межвузовская научная-техническая конференция, Неделя науки (32; 2003; Санкт-Петербург) ; Совет СПбГПУ по научно-исследовательской работе студентов |
| Imprint | Санкт-Петербург, 2005 |
| Collection | Общая коллекция |
| Subjects | молекулярно-лучевая эпитаксия ; приборные гетероструктуры |
| Document type | Article, report |
| File type | |
| Language | Russian |
| Rights | Свободный доступ из сети Интернет (чтение, печать, копирование) |
| Record key | RU\SPSTU\edoc\8214 |
| Record create date | 3/9/2005 |
We unify the method of exchange perturbation theory for multicenter systems. For the case ofexchange degeneracy in the total spin of the system we give a seqular equation. On the basis of thisformalism we develop an algorithm for calculating the Heisenberg parameter for magnetic materials. Finally,we calculate the characteristics of antiferromagnetic transitions for the high-Tc materials La2-xMeCuO4 andYBa2Cu3O6.
The growth of InGaN/GaN heterostructures on sapphire substrates were realized on ammoniaMBE system produced by ATC-STE. The photoluminescence properties and In content depending on thegrowth conditions such as InGaN growth rate and temperature were investigated. The growth temperature6500C and growth rate 0.05 mkm/h of InGaN were found to be optimal for emission in blue range of spectrain our growth conditions.
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