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We unify the method of exchange perturbation theory for multicenter systems. For the case ofexchange degeneracy in the total spin of the system we give a seqular equation. On the basis of thisformalism we develop an algorithm for calculating the Heisenberg parameter for magnetic materials. Finally,we calculate the characteristics of antiferromagnetic transitions for the high-Tc materials La2-xMeCuO4 andYBa2Cu3O6.
The growth of InGaN/GaN heterostructures on sapphire substrates were realized on ammoniaMBE system produced by ATC-STE. The photoluminescence properties and In content depending on thegrowth conditions such as InGaN growth rate and temperature were investigated. The growth temperature6500C and growth rate 0.05 mkm/h of InGaN were found to be optimal for emission in blue range of spectrain our growth conditions.
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