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Созданы диоды Шоттки на основе Pd-Oxide-InP структуры с толщиной оксида от 0 до 1000Å и исследованы их электрические и фотоэлектрические свойства и чувствительность к водороду в интервале температур 90-300K. Созданные диоды Шоттки на основе Pd-Oxide-InP структуры и светодиод, излучающий на длине волны 0.9 μm, работают как оптопара для сенсора водорода. Время реакции структуры на импульсную подачу водорода составило 1-2 с, а постоянная времени спада фототока 10 с (в режиме тока короткого замыкания). Полученные структуры способны работать при комнатной температуре и низком энергопотреблении и перспективны для использования в сенсорах водорода.
In this work, we have demonstrated the application of the Pd-Oxide-InP Schottky diodes for manufacturing of the compact hydrogen sensors. Electrical and photoelectrical properties of the Pd-Oxide-InP Schottky diodes was investigated. The studies were conducted both with hydrogen and without hydrogen. Current-voltage characteristics (I-V) were investigated in the temperature range 90-300 K. The termo-tunnel mechanism of the current flow was determined from the analysis of the (I-V) characteristics variation with temperature as well as the Schottky barrier height. The Schottky diode and LED with the wavelength of 0.9 μm was used as an optocouple in the hydrogen sensor. Response time of the Schottky diode to the hydrogen switch-on was 1-2 sec with the recovery time constant equal to 10 sec (at short-circuit current regime).
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