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Данная работа посвящена получению многокомпонентных твердых растворов системы In-As-Sb-P и созданию на их основе светодиодных структур излучающих на длине волны 4.2 мкм методом МОГФЭ. Были найдены нужные условия роста твердых растворов гетероперехода InAsSb/InAsSbP. На основе данного гетероперехода были созданы светодиодные структуры и исследованы их электрические и электролюминесцентные свойства.
The presented work describes the process of metalorganic vapour phase epitaxy of multicomponent In-As-Sb-P solid solutions that serve as the basis for fabrication of light-emitting structures with radiation wavelength 4.2 mm. Film growth conditions were selected to produce InAsSb/InAsSbP heterojunctions that were further used to build light-emitting diode structures. Electrical and electroluminescent properties of these structures were investigated.
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