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Работа посвящена изготовлению и исследованию свойств гетероструктур Si-ZnxCd1-xTe. Исследуется влияние цинка на фотоэлектрические параметры. Обоснована методика изготовления структур, приведены примеры напыления плёнок твердого раствора. Описана методика исследования электрических и фотоэлектрических свойств структур. Приводятся данные экспериментального исследования.
The paper is dedicated to the manufacture and study of the electrical properties of heterostructures Si-ZnxCd1-xTe. The effect of Zn on the electrical properties is studied, the technique of manufacturing structures is substantiated, the parameters of film evaporation of solid solution are given. The technique for the study of photoelectrical parameters of the structures is described. The data of experimental investigations of the spectral distribution of sensitivity in the heterostructure are given.
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